The core of the light-emitting diode
is composed of P-type semiconductor and N-type semiconductor chip, between the P-type semiconductor and N-type semiconductor has a transition layer, known as the P-N junction. In some semiconductor materials PN junction, the injection of minority carriers and the majority of carrier recombination will be the excess energy in the form of light released, so that the power directly into light energy.
PN junction with reverse voltage
the minority carrier is difficult to inject, so do not light. The use of injection-type electroluminescence principle of the manufacture of the diode called light-emitting diodes, known as LED. When it is in the positive working state (that is, plus the forward voltage at both ends), the current flows from the LED anode to the cathode, the semiconductor crystal from the ultraviolet to infrared different colors of light, light intensity and current.
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